CHA6105 rohs compliant ref. : dsCHA61050106 - 16 apr 10 1/8 specifications subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - b.p.46 - 91401 orsay cede x france tel. : +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 8-12ghz driver amplifier gaas monolithic microwave ic description the CHA6105 is a monolithic three-stage medium power amplifier designed for x-band applications. the driver provides typically 31.5dbm output power at saturation and is suitable for systems requiring a high compression level. moreover it includes a biasing control circuit that makes pout less sensitive to spread and chip environment. the circuit is manufactured with a phemt process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. it is available in chip form. main features frequency range: 8-12ghz 31.5dbm saturated output power 30db linear gain quiescent bias point: 8v@700ma chip size: 2.80 x 2.21 x 0.07mm in out vd1 vd2 vd3 v_c vd3 control circuit in out vd1 vd2 vd3 v_c vd3 control circuit 22 23 24 25 26 27 28 29 30 31 32 33 34 7 7,5 8 8,5 9 9,5 10 10,5 11 11,5 12 12,5 13 frequency (ghz) pout (dbm) @ 3dbc, linear gain (db) 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 id (ma) @ 3dbc id (ma) @ 3dbc (%) pout (dbm) @ 3dbc (dbm) linear gain (db) pout & id @ 3db gain compression and linear gain (pulse 25s 10% tamb. 20c) main characteristics tamb = +20c, vc = +8v (pulse 25s 10%) symbol parameter min typ max unit fop operating frequency range 8 12 ghz g small signal gain 30 db psat saturated output power 31.5 dbm idq power supply quiescent current 700 ma esd protections: electrostatic discharge sensitive device observe handling precautions!
CHA6105 8-12ghz driver amplifier ref. : dsCHA61050106 - 16 apr 10 2/8 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 electrical characteristics vd = +8v, pulse 25s 10% symbol parameter min typ max unit top operating temperature range -40 85 c fop operating frequency range 8 12 ghz g small signal gain at 25c 25.5 30 34 db d g_t linear gain variation vs temperature at 25c -0.03 5 db/c p1db output power at 1db gain compression at 25c 30.5 dbm p3db output power at 3db gain compression at 25c 29.5 31 dbm psat output power at saturation 31.5 dbm dbs11 input return loss 2:1 db dbs22 output return loss 2:1 db vd power supply voltage 8 v idq power supply quiescent current 700 ma id_ 3dbc consumption under 3db gain compression 925 1150 ma v_c drain current control voltage -5 v i_c biasing circuit consumption 25 ma absolute maximum ratings (1) tamb = 20c symbol parameter values unit pin_max maximum rf input power 13 dbm cmp compression level 13 db vd power supply voltage 9 v maximum value of cw power supply current 850 ma v_c drain current control voltage -6 v tj maximum junction temperature 175 c tstg storage temperature range -55 to +125 c (1) operation of this device above anyone of these parameters may cause permanent damage
8-12ghz driver amplifier CHA6105 ref. dsCHA61050106 - 16 apr 10 3/8 specifications s ubject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical measurement characteristics measurements vd = 8v; vctrl = -5v (id quiescent = 700ma). pulse d = 25s 10% 18 20 22 24 26 28 30 32 34 36 38 40 7 7,5 8 8,5 9 9,5 10 10,5 11 11,5 12 12,5 13 frequency (ghz) linear gain (db) 85c 25c -20c -40c linear gain vs frequency and temperature 24 25 26 27 28 29 30 31 32 33 34 7 7,5 8 8,5 9 9,5 10 10,5 11 11,5 12 12,5 13 frequency (ghz) pout (dbm) temp 85c temp 25c temp -20c temp -40c output power @ 3db gain compression vs frequency an d temperature
CHA6105 8-12ghz driver amplifier ref. : dsCHA61050106 - 16 apr 10 4/8 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 7 7,5 8 8,5 9 9,5 10 10,5 11 11,5 12 12,5 13 frequency (ghz) id (ma) ic-low pin temp 85c ic-low pin temp 25c ic-low pin temp -20c ic-low pin temp -40c ic-3db temp 85c ic-3db temp 25c ic-3db temp -20c ic-3db temp -40c drain current @ low pin and @ 3db gain compression vs frequency and temperature tamb = 25c, vd = 8v; vctrl = -5v (id quiescent = 7 00ma). pulsed = 25s 10% 14 16 18 20 22 24 26 28 30 32 34 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 9 11 13 pin (dbm) pout (dbm) 8ghz 9ghz 10ghz 11ghz 12ghz output power vs input power
8-12ghz driver amplifier CHA6105 ref. dsCHA61050106 - 16 apr 10 5/8 specifications s ubject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 -2 -1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 compression (db) pout (dbm) 8ghz 9ghz 10ghz 11ghz 12ghz output power vs gain compression 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 -15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 9 11 13 pin (dbm) id (ma) 8ghz 9ghz 10ghz 11ghz 12ghz drain current vs input power
CHA6105 8-12ghz driver amplifier ref. : dsCHA61050106 - 16 apr 10 6/8 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 chip mechanical data and pin references chip thickness = 70m +/- 10m rf pads (1, 6) = 122 x 150m2 dc pads (2, 8, 9, 10, 11, 12, 13, 14, 15, 16) = 100 x 100m2 dc pads (3, 4, 5, 7) = 186 x 100m2 pin number pin name description 1 in input rf 11 v_c control voltage 14 gr not used 2, 8, 12, 15 gnd ground (nc) 9, 10, 13, 16 - not used 3, 4, 5, 7 vd drain supply voltage 6 out output rf 2 1 3 4 5 6 7 8 9 10 11 12 13 14 15 16 2
8-12ghz driver amplifier CHA6105 ref. dsCHA61050106 - 16 apr 10 7/8 specifications s ubject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 assembly recommendations in test fixture
CHA6105 8-12ghz driver amplifier ref. : dsCHA61050106 - 16 apr 10 8/8 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 recommended esd management refer to the application note an0020 available at http://www.ums-gaas.com for esd sensitivity and handling recommendations for the ums products. ordering information chip form : CHA6105-99f/00 information furnished is believed to be accurate an d reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of u se of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or o therwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publicat ion supersedes and replaces all information previou sly supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical co mponents in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.
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